Modulation‐doped In0.48Al0.52P/In0.2Ga0.8As field‐effect transistors
نویسندگان
چکیده
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1993
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.108756